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BFG17 반도체 회로 부품 판매점

NPN 3 GHz wideband transistor



NXP Semiconductors 로고
NXP Semiconductors
BFG17 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG17A
NPN 3 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 12


BFG17 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN 3 GHz wideband transistor
DESCRIPTION
NPN wideband transistor in a
microminiature plastic SOT143
surface mounting envelope with
double emitter bonding.
It is intended for use in wideband
aerial amplifiers using SMD
technology.
PINNING
PIN DESCRIPTION
Code: E6
1 collector
2 base
3 emitter
4 emitter
Product specification
BFG17A
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 SOT143.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
Ptot
hFE
fT
Cre
GUM
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
CONDITIONS
open emitter
open base
up to Ts = 85 °C; note 1
IC = 25 mA; VCE = 1 V;
Tamb = 25 °C
IC = 25 mA; VCE = 5 V;
f = 500 MHz; Tamb = 25 °C
IC = 0; VCE = 5 V; f = 1 MHz
IC = 15 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
IC = 2 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C; ZS = 60 ; bs = opt.
MIN.
20
TYP.
2.8
0.4
15
2.5
MAX. UNIT
25 V
15 V
50 mA
300 mW
150
GHz
pF
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to Ts = 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
65
MAX. UNIT
25 V
15 V
2.5 V
50 mA
300
+150
175
mW
°C
°C
1995 Sep 12
2




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BFG17 transistor

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