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BFG135A 반도체 회로 부품 판매점

NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BFG135A 데이터시트, 핀배열, 회로
BFG 135A
NPN Silicon RF Transistor
• For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
70mA to 130mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
fT = 6 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 135A BFG135A Q62702-F1322
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 100 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
25
25
2
150
20
1000
150
- 65 ... + 150
- 65 ... + 150
50
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-16-1996


BFG135A 데이터시트, 핀배열, 회로
BFG 135A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 25 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 100 mA, VCE = 8 V
V(BR)CEO
15
ICES
-
ICBO
-
IEBO
-
hFE
80
-
-
-
-
120
max.
-
100
50
1
250
Unit
V
µA
nA
µA
-
Semiconductor Group
2
Dec-16-1996




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BFG135A transistor

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