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PDF BFG10X Data sheet ( Hoja de datos )
| Número de pieza | BFG10X | |
| Descripción | UHF power transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 22
1 page  
Philips Semiconductors
UHF power transistor
Product specification
BFG10W/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms
1.9
0.9
0.9
3.6
6
6
PL
(mW)
200
650
360
Gp
(dB)
≥5; typ. 7
≥10
≥12.5
ηc
(%)
≥50; typ. 60
≥50
≥50
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2.
handbook,1h0alfpage
Gp
(dB)
8
6
4
MLC820
100
ηc
η c (%)
80
Gp
60
40
2 20
00
0 100 200 300 400 500
PL (mW)
Pulsed, class-AB operation.
VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for PL = 200 mW.
Fig.4 Power gain and efficiency as functions
of load power; typical values.
handbook,1h6alfpage
Gp
(dB)
12
8
Gp
ηc
MBG194
80
ηc
(%)
60
40
4 20
0 20
0.3 0.5 0.7 0.9 1.1
PL (mW)
Pulsed, class-AB operation.
VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for PL = 600 mW.
Fig.5 Power gain and efficiency as functions
of load power; typical values.
1995 Sep 22
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BFG10X.PDF ] | |
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