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Vishay Telefunken |
Silicon PNP Planar RF Transistor
BF970
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF oscillator and mixer stages.
Features
D High gain
D Low noise
3
2
94 9308
1
BF970 Marking: BF970
Plastic case (TO 50)
1 = Collector, 2 = Base, 3 = Emitter
13623
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60 °C
Storage temperature range
Symbol
–VCBO
–VCEO
–VEBO
–IC
Ptot
Tj
Tstg
Value
40
35
3
30
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
300
Unit
K/W
Document Number 85005
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
BF970
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
–VCE = 40 V, VBE = 0
Collector-base cut-off current
–VCB = 20 V, IE = 0
Emitter-base cut-off current
–VEB = 2 V, IC = 0
Collector-emitter breakdown voltage –IC = 1 mA, IB = 0
DC forward current transfer ratio –VCE = 10 V, –IC = 3 mA
Symbol Min Typ Max Unit
–ICES
100 mA
–ICBO
–IEBO
100 nA
10 mA
–V(BR)CEO 35
V
hFE 25 50 90
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Transition frequency
Collector-base capacitance
Noise figure
Power gain
Collector current for Gpbmax
–VCE = 10 V, –IC = 3 mA, f = 300 MHz
–VCB = 10 V, f = 1 MHz
–VCE = 10 V, –IC = 3 mA, ZS = 50 W,
f = 800 MHz
–VCE = 10 V, –IC = 3 mA, ZL = 500 W,
f = 800 MHz
–VCE = 10 V, ZL = 500 W, f = 800 MHz
Sym- Min Typ Max Unit
bol
fT
1000
MHz
Ccb 0.4 pF
F 4.2 5.0 dB
Gpb 13 14.5
–IC 5
dB
mA
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 85005
Rev. 3, 20-Jan-99
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