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Siemens Semiconductor Group |
NPN Silicon RF Transistor
q For SAW filter driver applications
in TV tuners
q For linear broadband VHF amplifier
stages
q For oscillator applications
BF 959
Type
BF 959
Marking
–
Ordering Code
Q62702-F640
Pin Configuration
123
CEB
Package1)
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter reverse voltage
Collector-base voltage
Emitter-base voltage
Peak collector current
Peak base current
Total power dissipation, TA ≤ 25 ˚C
VCE ≤ 15 V
Junction temperature
Storage temperature range
Symbol
VCE0
VCES
VCB0
VEB0
ICM
IBM
Ptot
Tj
Tstg
Values
20
30
30
3
100
30
500
Unit
V
mA
mW
150 ˚C
– 55 … + 150
Thermal Resistance
Junction - ambient
Rth JA
≤ 250
K/W
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
BF 959
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA
Collector-base breakdown voltage
IC = 10 µA
Emitter-base breakdown voltage
IE = 10 µA
Collector cutoff current
V = 20 V
DC current gain, VCE = 10 V
IC = 5 mA
IC = 20 mA
Base-emitter voltage
IC = 20 mA, VCE = 10 V
Collector-emitter saturation voltage
IC = 30 mA, IB = 2 mA
Base-emitter saturation voltage
IC = 30 mA, IB = 2 mA
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
IC = 30 mA, VCE = 5 V
Output capacitance
VCB = 10 V, IE = 0, f = 1 MHz
Collector-base capacitance
VCE = 10 V, VBE = 0, f = 1 MHz
Noise figure
VCE = 10 V, f = 200 MHz, RS = 60 Ω
IC = 5 mA
IC = 20 mA
Output conductance
IC = 20 mA, VCE = 10 V, f = 35 MHz
Symbol
Values
Unit
min. typ. max.
V(BR) CE0 20
V(BR) CB0 30
V(BR) EB0 3
ICB0 –
hFE
35
40
VBE –
VCE sat
–
VBE sat
–
––V
––
––
– 100 nA
––
85 –
0.75 –
–
V
–1
– 0.95
fT
700 1100 –
600 –
–
Cobo
–
0.9 –
Ccb – 0.75 –
F
–3–
–4–
g22e – 0.06 –
MHz
pF
dB
mS
Semiconductor Group
2
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