|
|
Número de pieza | BF844 | |
Descripción | High Voltage Transistor(NPN) | |
Fabricantes | Motorola Inc | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BF844 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistor
NPN Silicon
Order this document
by BF844/D
BF844
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
400 Vdc
450 Vdc
6.0 Vdc
300 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO 400
V(BR)CES 450
V(BR)CBO 450
V(BR)EBO
6.0
ICBO
—
ICES
—
IEBO
—
Max Unit
— Vdc
— Vdc
— Vdc
— Vdc
0.1 µAdc
500 nAdc
0.1 µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page PACKAGE DIMENSIONS
R
SEATING
PLANE
AB
P
L
F
K
XX
H
V
G
C
1
N
N
D
J
SECTION X–X
CASE 029–04
(TO–226AA)
ISSUE AD
BF844
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.022
F 0.016 0.019
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 –––
L 0.250 –––
N 0.080 0.105
P ––– 0.100
R 0.115 –––
V 0.135 –––
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.41 0.55
0.41 0.48
1.15 1.39
2.42 2.66
0.39 0.50
12.70 –––
6.35 –––
2.04 2.66
––– 2.54
2.93 –––
3.43 –––
STYLE 1:
PIN 1.
2.
3.
EMITTER
BASE
COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BF844.PDF ] |
Número de pieza | Descripción | Fabricantes |
BF840 | NPN medium frequency transistor | NXP Semiconductors |
BF840 | NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion) | Siemens Semiconductor Group |
BF841 | NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion) | Siemens Semiconductor Group |
BF844 | High Voltage Transistor(NPN) | Motorola Inc |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |