|
NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BF824W
PNP medium frequency transistor
Product data sheet
Supersedes data of 1997 Jul 07
1999 Apr 15
NXP Semiconductors
PNP medium frequency transistor
Product data sheet
BF824W
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a SOT323 plastic
package.
MARKING
TYPE NUMBER
BF824W
MARKING CODE(1)
F8∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
MAM048
2
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−4
−25
−25
200
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
|