파트넘버.co.kr BF822 데이터시트 PDF


BF822 반도체 회로 부품 판매점

Surface mount Si-Epitaxial PlanarTransistors



Diotec Semiconductor 로고
Diotec Semiconductor
BF822 데이터시트, 핀배열, 회로
BF 720, BF 722
High Voltage Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
6.5±0.2
3±0.1
4
1.65
1 0.7
2.3
23
3.25
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.5 W
SOT-223
0.04 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Grenzwerte (TA = 25/C)
BF 720
BF 722
VCE0
VCB0
VEB0
Ptot
IC
ICM
IBM
Tj
TS
300 V
250 V
300 V
250 V
5V
1.5 W 1)
100 mA
200 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
IE = 0, VCB = 200 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
ICB0
ICB0
IC = 0, VEB = 5 V
IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 30 mA, IB = 5 mA
VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 10 nA
– – 10 :A
– – 50 nA
– – 600 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
10 01.11.2003


BF822 데이터시트, 핀배열, 회로
High Voltage Transistors
BF 820, BF 822
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 20 V, IC = 25 mA
Gain-Bandwidth Product – Transitfrequenz
hFE
50 –
VCE = 20 V, IC = 25 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
50 MHz
VCB = 30 V, IE = ie = 0, f = 1 MHz
Thermal resistance – Wärmewiderstand
CCB0
– 1.6 pF
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
RthA 87 K/W 2)
RthS 27 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BF 721, BF 723
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
11




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BF822 transistor

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