파트넘버.co.kr BF821 데이터시트 PDF


BF821 반도체 회로 부품 판매점

Small Signal Transistors (PNP)



General Semiconductor 로고
General Semiconductor
BF821 데이터시트, 핀배열, 회로
BF821, BF823
Small Signal Transistors (PNP)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
FEATURES
PNP Silicon Epitaxial Planar Transistors
especially suited for application in class-
B video output stages of TV receivers
and monitors.
As complementary types, the NPN tran-
sistors BF820 and BF822 are recommended.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
BF821 = 1W
BF823 = 1Y
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Power Dissipation at TSB = 50 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout
BF821
BF823
BF823
BF821
Symbol
–VCBO
–VCBO
–VCEO
–VCER
–VEBO
–IC
–ICM
Ptot
Tj
TS
Value
300
250
250
300
5
50
100
3001)
150
–65 to +150
Unit
V
V
V
V
V
mA
mA
mW
°C
°C
4/98


BF821 데이터시트, 핀배열, 회로
BF821, BF823
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at –IC = 100 µA, IE = 0
BF821
BF823
Collector-Emitter Breakdown Voltage BF823
at –IC = 10 mA, IB = 0
Collector-Emitter Breakdown Voltage BF821
at RBE = 2.7 k, –IC = 10 mA
Emitter-Base Breakdown Voltage
at –IE = 100 µA, IC = 0
Collector-Base Cutoff Current
at –VCB = 200 V, IE = 0
Collector-Emitter Cutoff Current
at RBE = 2.7 k, –VCE = 250 V
at RBE = 2.7 k, –VCE = 200 V, Tj = 150 °C
Collector Saturation Voltage
at –IC = 30 mA, –IB = 5 mA
DC Current Gain
at –VCE = 20 V, –IC = 25 mA
Gain-Bandwidth Product
at –VCE = 10 V, –IC = 10 mA
Feedback Capacitance
at –VCE = 30 V, –IC = 0, f = 1 MHz
Thermal Resistance Junction to Ambient Air
1) Device on fiberglass substrate, see layout
Symbol
–V(BR)CBO
–V(BR)CBO
–V(BR)CEO
Min.
300
250
250
–V(BR)CER 300
–V(BR)EBO 5
–ICBO
–ICER
–ICER
–VCEsat
hFE
fT
Cre
RthJA
50
60
.30 (7.5)
.12 (3)
Typ.
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Max.
10
Unit
V
V
V
V
V
nA
50
10
0.8
1.6
4301)
nA
µA
V
MHz
pF
K/W




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BF821 transistor

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