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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF819
NPN high-voltage transistor
Product specification
Supersedes data of 1997 Jun 20
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
NPN high-voltage transistor
Product specification
BF819
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 250 V).
APPLICATIONS
• Driver for a line output transistor in colour television
receivers.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to mounting base
base
DESCRIPTION
NPN high-voltage transistor in a TO-202; SOT128B plastic
package.
handbook, halfpage
2
3
1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
Cre
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
12 3
MAM305
Fig.1 Simplified outline (TO-202; SOT128B)
and symbol.
CONDITIONS
open emitter
open base
Tamb ≤ 75 °C
IC = 20 mA, VCE = 10 V
IC = ic = 0; VCB = 30 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 100 MHz
TYP.
−
−
−
−
45
−
90
MAX.
300
250
300
6
−
3.5
−
UNIT
V
V
mA
W
pF
MHz
1997 Sep 03
2
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