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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF689K
NPN 2 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BF689K
DESCRIPTION
NPN transistor in a plastic SOT54
(TO-92 variant) envelope. It is
intended for application as an
amplifier or oscillator in the VHF and
UHF range.
PINNING
PIN DESCRIPTION
Code: F689
1 emitter
2 base
3 collector
1
2
3
MSB034
Fig.1 SOT54.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
fT transition frequency
CONDITIONS
open emitter
open base
up to Tamb = 60 °C
IC = 2 mA; VCE = 5 V; Tj = 25 °C
IC = 20 mA; VCE = 5 V; Tj = 25 °C
IC = 15 mA; VCE = 5 V; f = 500 MHz
MIN. TYP. MAX. UNIT
− − 25 V
− − 15 V
− − 25 mA
− − 360 mW
20 − −
35 − −
− 1.8 −
GHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VCER
VEBO
IC
ICM
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
RBE ≤ 50 Ω
open collector
tp < 1 µs
up to Tamb= 60 °C
MIN. MAX. UNIT
− 25
− 15
− 25
− 3.5
− 25
− 50
− 360
−55 150
− 150
V
V
V
V
mA
mA
mW
°C
°C
September 1995
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