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Siemens Semiconductor Group |
PNP Silicon RF Transistor
q For VHF oscillator applications
BF 660
Type
BF 660
Marking
LEs
Ordering Code
(tape and reel)
Q62702-F982
Pin Configuration
123
BEC
Package1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Emitter current
Total power dissipation, TA ≤ 25 ˚C
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEB0
IC
IE
Ptot
Tj
Tstg
Values
Unit
30 V
40
4
25 mA
30
280 mW
150 ˚C
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
≤ 450
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BF 660
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 20 V, IE = 0
DC current gain
IC = 3 mA, VCE = 10 V
AC Characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, VBE = 0 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR) CE0 30
V(BR) CB0 40
V(BR) EB0 4
ICB0 –
hFE 30
–
–
–
–
–
–V
–
–
50 nA
––
fT – 700 – MHz
Ccb – 0.6 – pF
Cce – 0.28 –
Semiconductor Group
2
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