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BF623 반도체 회로 부품 판매점

PNP high-voltage transistors



NXP Semiconductors 로고
NXP Semiconductors
BF623 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BF621; BF623
PNP high-voltage transistors
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 21


BF623 데이터시트, 핀배열, 회로
Philips Semiconductors
PNP high-voltage transistors
Product specification
BF621; BF623
FEATURES
Low current (max. 50 mA)
High voltage (max. 300 V).
APPLICATIONS
Video output stages.
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
DESCRIPTION
PNP high-voltage transistor in a SOT89 plastic package.
NPN complements: BF620 and BF622.
MARKING
TYPE NUMBER
BF621
BF623
MARKING CODE
DF
DB
handbook, halfpage
2
3
1
1
Bottom view
2
3
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF621
BF623
collector-emitter voltage
BF621
BF623
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
− −300 V
− −250 V
− −300 V
− −250 V
− −5 V
− −50 mA
− −100 mA
− −50 mA
1.25 W
65 +150 °C
150 °C
65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 21
2




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