|
Siemens Semiconductor Group |
NPN Silicon RF Transistor
q Common emitter IF/RF amplifier
q Low feedback capacitance
due to shield diffusion
BF 599
Type
BF 599
Marking
NB
Ordering Code
(tape and reel)
Q62702-F979
Pin Configuration
123
BEC
Package1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TA ≤ 25 ˚C
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEB0
IC
IB
Ptot
Tj
Tstg
Values
Unit
25 V
40
4
25 mA
5
280 mW
150 ˚C
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
≤ 450
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BF 599
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector cutoff current
VCB = 20 V, IE = 0
DC current gain
IC = 7 mA, VCE = 10 V
Collector-emitter saturation voltage
IC = 10 mA, IB = 1 mA
Base-emitter voltage
IC = 7 mA, VCE = 10 V
AC Characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, VBE = 0 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz
Optimum power gain
IC = 7 mA, VCE = 10 V, f = 35 MHz
Forward transfer admittance
IC = 7 mA, VCE = 10 V, f = 35 MHz
Symbol
Values
Unit
min. typ. max.
V(BR) CE0 25
ICB0
–
hFE 38
VCE sat
–
VBE –
––V
– 100 nA
70 –
–
0.15 –
V
0.78 –
fT –
Ccb –
Cce –
Gpe opt
–
I y21e I –
550 –
0.35 –
0.68 –
43 –
175 –
MHz
pF
dB
mS
Semiconductor Group
2
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