|
NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF585; BF587
NPN high-voltage transistors
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 21
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF585; BF587
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
DESCRIPTION
NPN transistors in a TO-202; SOT128B plastic package.
PNP complement: BF588.
2
3
1
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
1 23
MBH793
Fig.1 Simplified outline (TO-202; SOT128B)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF585
BF587
collector-emitter voltage
BF585
BF587
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
in free air; Tamb ≤ 25 °C
in free air; Tmb ≤ 25 °C
MIN. MAX. UNIT
− 350 V
− 400 V
− 300 V
− 350 V
−5V
− 100 mA
− 200 mA
− 100 mA
− 1.6 W
−5W
−65 +150 °C
− 150 °C
−65 +150 °C
1999 Apr 21
2
|