파트넘버.co.kr BF579R 데이터시트 PDF


BF579R 반도체 회로 부품 판매점

Silicon PNP Planar RF Transistor



Vishay Telefunken 로고
Vishay Telefunken
BF579R 데이터시트, 핀배열, 회로
Silicon PNP Planar RF Transistor
BF579/BF579R
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF/VHF uncontrolled prestages with low noise and
low cross modulation.
Features
D High transition frequency
D Low distortion
11
94 9280
23
BF579 Marking: G7
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
9510527
32
BF579R Marking: GG
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb 60 °C
Storage temperature range
Symbol
–VCBO
–VCEO
–VEBO
–IC
Ptot
Tj
Tstg
Value
20
20
3
25
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85001
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)


BF579R 데이터시트, 핀배열, 회로
BF579/BF579R
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
–VCE = 20 V, VBE = 0
Collector-base cut-off current
–VCB = 15 V, IE = 0
Emitter-base cut-off current
–VEB = 3 V, IC = 0
Collector-emitter breakdown voltage –IC = 1 mA, IB = 0
DC forward current transfer ratio –VCE = 10 V, –IC = 10 mA
Symbol Min Typ Max Unit
–ICES
100 mA
–ICBO
–IEBO
100 nA
10 mA
–V(BR)CEO 20
V
hFE 20 50 90
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Transition frequency
Collector-base capacitance
Noise figure
Power gain
–VCE = 10 V, –IC = 10 mA, f = 100 MHz
–VCB = 10 V, f = 1 MHz
–VCE = 10 V, –IC = 10 mA, ZS = 50 W,
f = 800 MHz
–VCE = 10 V, –IC = 10 mA, ZS = 50 W, ZL
= 500 W, f = 800 MHz
Sym- Min Typ Max Unit
bol
fT
1750
MHz
Ccb 0.55 pF
F 3.4 4.2 dB
Gpb 16 dB
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 85001
Rev. 3, 20-Jan-99




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BF579R transistor

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