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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29
Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
FEATURES
• Interchangeability of drain and source connections
• High IDSS range
• Frequency up to 450 MHz.
APPLICATIONS
• VHF and UHF amplifiers
• Mixers
• General purpose switching.
DESCRIPTION
General purpose N-channel symmetrical silicon junction
field-effect transistors in a plastic TO-92 variant package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN SYMBOL
DESCRIPTION
BF246A; BF246B; BF246C
1 d drain
2 g gate
3 s source
BF247A; BF247B; BF247C
1 d drain
2 s source
3 g gate
1
handbook, halfpage2
3
g
MAM257
Fig.1 Simplified outline (TO-92 variant)
and symbol.
d
s
QUICK REFERENCE DATA
SYMBOL
VDS
VGSoff
IDSS
Ptot
yfs
Crs
Tj
PARAMETER
drain-source voltage
gate-source cut-off voltage
drain current
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
total power dissipation
forward transfer admittance
reverse transfer capacitance
operating junction temperature
CONDITIONS
ID = 10 nA; VDS = 15 V
VDS = 15 V; VGS = 0
up to Tamb = 50 °C
ID = 10 mA; VDS = 15 V;
f = 1 kHz
ID = 10 mA; VDS = 15 V;
f = 1 MHz
MIN.
−
−0.6
TYP.
−
−
MAX.
±25
−14.5
UNIT
V
V
30 −
60 −
110 −
−−
8−
− 3.5
−−
80 mA
140 mA
250 mA
400 mW
− mS
− pF
150 °C
1996 Jul 29
2
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