BDX63 반도체 회로 부품 판매점
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
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 Seme LAB |
MECHANICAL DATA
Dimensions in mm
26.6 max.
4.2
9.0 max.
2.5
BDX63
BDX63A
BDX63B
BDX63C
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
BE
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
10.9
12.8
TO3 Package.
Case connected to collector.
PNP complements are:
BDX62, BDX62A, BDX62B, BDX62C.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
BDX BDX BDX BDX
63 63A 63B 63C
VCEO
Collector - emitter voltage (open base)
60 80 100 120 V
VCBO
Collector - base voltage (open emitter)
80 100 120 140 V
VEBO
Emitter - base voltage (open collector)
5 5 5 5V
IC Collector current
8A
ICM Collector current (peak)
12 A
IB Base current
150 mA
Ptot Total power dissipation at Tcase= 25°C
90 W
Tj Maximum junction temperature
200 °C
Tstj Storage junction temperature
-65 to 200
°C
Rth j-mb
Thermal resistance, junction to mounting base.
1.94
°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/93
BDX63
BDX63A
BDX63B
BDX63C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise stated)
Parameter
Test Conditions
ICBO
ICEO
IEBO
hFE
VBE
Collector cut-off current
Collector cut-off current
Emitter cut-off current
D.C. current gain (note 1)
Base - emitter voltage (note 1)
IE = 0, VCB = VCEOmax
IE = 0, VCB = ½VCBOmax, Tj = 200°C
IB = 0, VCE = ½VCEOmax
IC = 0, VEB = 5V
IC = 0.5A, VCE = 3V
IC = 3A, VCE = 3V
IC = 8A, VCE = 3V
IC = 3A, VCE = 3V
VCEsat
Collector - emitter saturation
voltage
IC = 3A, IB = 12mA
Cc
fhfe
E(BR)
Collector capacitance
Cut-off frequency
Turn-off breakdown energy
with inductive load
IE = Ie = 0, VCB = 10V
IC = 3A, VCE = 3V
–IBoff = 0, ICon = 4.5 A
tp = 1ms, T = 100ms
hFE1/hFE2
D.C. current gain ratio of
complementary matched pairs
IC = 3A, VCE = 3V
ïhfeï
VF
Small signal current gain
Diode, forward voltage
IC = 3A, VCE = 3V, f = 1MHz
IF = 3A
Min.
1000
50
Note 1: Measured under pulse conditions , tp < 300ms, d < 2%
Typ.
2500
2600
100
100
100
1.2
Max.
0.2
2
0.5
5
Unit.
mA
mA
mA
2.5 V
2V
pF
kHz
mJ
2.5
V
R1 typ. 8KW
R2 typ. 100W
Circuit diagram.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/93
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BDX63 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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