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PDF BDX54C Data sheet ( Hoja de datos )
| Número de pieza | BDX54C | |
| Descripción | Plastic Medium-Power Complementary Silicon Transistors | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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 1. PDF - TO-220, PNP Transistor  Hay una vista previa y un enlace de descarga de BDX54C (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDX53B/D
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BDX53B BDX53C
BDX54B BDX54C
80 100
80 100
5.0
8.0
12
0.2
60
0.48
– 65 to + 150
Symbol
RθJA
RθJC
Max
70
70
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C/W
TA TC
4.0 80
NPN
BDX53B
BDX53C
PNP
BDX54B
BDX54C
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
65 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
1.0 20
TC
TA
0
0 20
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
1
1 page  
BDX53B BDX53C BDX54B BDX54C
NPN
BDX53B, BDX53C
+ 5.0
v+ 4.0 *IC/IB hFE/3
+ 3.0
+ 2.0 25°C to 150°C
+ 1.0
– 55°C to 25°C
0
– 1.0 *θVC for VCE(sat)
– 2.0
– 3.0 θVB for VBE
– 4.0
25°C to 150°C
– 55 to 150°C
PNP
BDX54B, BDX54C
+ 5.0
v+ 4.0 *IC/IB hFE/3
+ 3.0
+ 2.0 25°C to 150°C
+ 1.0
– 55°C to 25°C
0
– 1.0 *θVC for VCE(sat)
– 2.0
– 3.0 θVB for VBE
– 4.0
25°C to 150°C
– 55 to 150°C
– 5.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
– 5.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
5.0 7.0 10
105
REVERSE
104
VCE = 30 V
103
FORWARD
105
REVERSE
104
VCE = 30 V
103
FORWARD
102
TJ = 150°C
101
100 100°C
102
TJ = 150°C
101
100°C
100 25°C
10– 1 25°C
– 0.6 – 0.4 – 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
10– 1
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
NPN
BDX53B
BDX53C
BASE
COLLECTOR
[ [8.0 k 120
PNP
BDX54B
BDX54C
COLLECTOR
BASE
[ [8.0 k 120
EMITTER
Figure 13. Darlington Schematic
EMITTER
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BDX54C.PDF ] | |
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