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ON Semiconductor |
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
VCEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBDX53B, BDX54B
80
BDX53C, BDX54C
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBDX53B, BDX54B
BDX53C, BDX54C
VCB
Vdc
80
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− Peak
VEB 5.0 Vdc
IC 8.0 Adc
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
IB 0.2 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25°C
PD
65
W
Derate above 25°C
0.48 W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg −65 to +150 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
RqJA
RqJC
70 °C/W
1.92 °C/W
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DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
13
Base 2 Emitter
Collector
BDX5xy =
A=
Y=
WW =
G=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BDX53B/D
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
TA TC
4.0 80
3.0 60
2.0 40
1.0 20
TC
TA
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
BDX53B, BDX54B
80 −
BDX53C, BDX54C
100 −
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
BDX53B, BDX54B
BDX53C, BDX54C
BDX53B, BDX54B
BDX53C, BDX54C
ICEO
ICBO
mAdc
− 0.5
− 0.5
mAdc
− 0.2
− 0.2
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
hFE 750 −
−
VCE(sat) − 2.0 Vdc
− 4.0
Base−Emitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA)
VBE(sat) − 2.5 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe 4.0 − −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
BDX53B, 53C
BDX54B, 54C
Cob
pF
− 300
− 200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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