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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BDX42; BDX43; BDX44
NPN Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 02
Philips Semiconductors
NPN Darlington transistors
Product specification
BDX42; BDX43; BDX44
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial switching applications such as:
– print hammers
– solenoids
– relay and lamp drivers.
DESCRIPTION
NPN Darlington transistor in a TO-126; SOT32 plastic
package. PNP complements: BDX45 and BDX47.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
handbook, halfpage
2
3
1
1 2 3 Top view
MAM349
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BDX42
BDX43
BDX44
VCES
collector-emitter voltage
BDX42
BDX43
BDX44
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
fT transition frequency
CONDITIONS
open emitter
VBE = 0
Tamb ≤ 25 °C
Tmb ≤ 100 °C
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 500 mA; VCE = 5 V; f = 100 MHz
MIN. TYP. MAX. UNIT
− − 60 V
− − 80 V
− − 90 V
−
−
−
−
−
−
1 000
2 000
−
−
−
−
−
−
−
−
−
200
45 V
60 V
80 V
1A
1.25 W
5W
−
−
− MHz
1997 Jul 02
2
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