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BDX34C 반도체 회로 부품 판매점

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS



STMicroelectronics 로고
STMicroelectronics
BDX34C 데이터시트, 핀배열, 회로
BDX33B BDX33C
® BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P ar ame te r
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
IC Collector Current
ICM Collector Peak Current
IB Base Current
Ptot T otal Dissipat ion at Tc 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 1999
NPN
PNP
BDX33B
BDX33C
BDX34B
BDX34C
80 100
80 100
10
15
0.25
70
-65 to 150
150
Un it
V
V
A
A
A
W
oC
oC
1/4


BDX34C 데이터시트, 핀배열, 회로
BDX33B BDX33C BDX34B BDX34C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
1.78
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Parameter
Test Conditions
ICBO
Collector Cut-off Current
(IE = 0)
for BDX33B/34B
for BDX33C/34C
Tcase = 100 oC
for BDX33B/34B
for BDX33C/34C
VCB = 80 V
VCB = 100V
VCB = 80 V
VCB = 100 V
ICEO
Collector Cut-off Current
(IB = 0)
for BDX33B/34B
for BDX33C/34C
Tcase = 100 oC
for BDX33B/34B
for BDX33C/34C
VCE = 40 V
VCE = 50V
VCE = 40 V
VCE = 50 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(s us)Collector-Emitt er Sust aining
Voltage (IB = 0)
VEB = 5 V
IC =100 mA for BDX33B/34B
for BDX33C/34C
VCER(sus)Collector-emitt er Sustaining
Voltage (RBE =100 )
VCEV(su s)Collector-emitt er Sustaining
Voltage (VBE =-1.5 V)
IC = 100 mA for BDX33B/34B
for BDX33C/34C
IC = 100 mA for BDX33B/34B
for BDX33C/34C
VCE(sat)Collector-emitt er Saturat ion
V ol ta ge
IC = 3 A
IB = 6 mA
V BE
hFE
Base-emitter Voltage
DC Current Gain
IC = 3 A
IC = 3 A
V CE = 3 V
V CE = 3 V
VFParallel-Diode Forward
V ol ta ge
IF = 8 A
hfe Small Signal Current Gain IC = 1 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 5 V
f = 1MHz
Mi n.
80
1 00
80
1 00
80
1 00
7 50
1 00
Typ .
M ax.
0.2
0.2
5
5
0.5
0.5
10
10
5
2.5
2.5
4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
Safe Operating Area
2/4




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BDX34C transistor

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