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Infineon Technologies AG |
PNP Silicon AF Power Transistors
For AF driver and output stages
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP951...BDP955 (NPN)
BDP952...BDP956
4
3
2
1 VPS05163
Type
BDP952
BDP954
BDP956
Marking
BDP 952
BDP 954
BDP 956
1=B
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BDP952 BDP954 BDP956 Unit
80 100 120 V
100 120 140
5 55
3A
5
200 mA
500
3W
150 °C
-65 ... 150
RthJS
17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jul-06-2001
BDP952...BDP956
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BDP952
BDP954
BDP956
V(BR)CEO
80
100
120
-
-
-
V
-
-
-
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BDP952
BDP954
BDP956
V(BR)CBO
100
120
140
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 100 V, IE = 0
Collector cutoff current
VCB = 100 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 2 A, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
V(BR)EBO 5
ICBO
-
ICBO
-
IEBO
-
hFE
VCEsat
25
40
15
-
VBEsat
-
--
- 100 nA
- 20 µA
- 100 nA
-
--
- 475
--
- 0.8 V
- 1.5
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 100 - MHz
Ccb - 40 - pF
1) Pulse test: t ≤=300µs, D = 2%
2
Jul-06-2001
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