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BDP952 반도체 회로 부품 판매점

PNP Silicon AF Power Transistors



Infineon Technologies AG 로고
Infineon Technologies AG
BDP952 데이터시트, 핀배열, 회로
PNP Silicon AF Power Transistors
 For AF driver and output stages
 High current gain
 Low collector-emitter saturation voltage
 Complementary types: BDP951...BDP955 (NPN)
BDP952...BDP956
4
3
2
1 VPS05163
Type
BDP952
BDP954
BDP956
Marking
BDP 952
BDP 954
BDP 956
1=B
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BDP952 BDP954 BDP956 Unit
80 100 120 V
100 120 140
5 55
3A
5
200 mA
500
3W
150 °C
-65 ... 150
RthJS
17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jul-06-2001


BDP952 데이터시트, 핀배열, 회로
BDP952...BDP956
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BDP952
BDP954
BDP956
V(BR)CEO
80
100
120
-
-
-
V
-
-
-
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BDP952
BDP954
BDP956
V(BR)CBO
100
120
140
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 100 V, IE = 0
Collector cutoff current
VCB = 100 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 2 A, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
V(BR)EBO 5
ICBO
-
ICBO
-
IEBO
-
hFE
VCEsat
25
40
15
-
VBEsat
-
--
- 100 nA
- 20 µA
- 100 nA
-
--
- 475
--
- 0.8 V
- 1.5
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 100 - MHz
Ccb - 40 - pF
1) Pulse test: t =300µs, D = 2%
2
Jul-06-2001




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BDP952 transistor

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