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BDP947 반도체 회로 부품 판매점

NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BDP947 데이터시트, 핀배열, 회로
NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP948, BDP950 (PNP)
BDP 947
Type
BDP 947
BDP 949
Marking Ordering Code
BDP 947 Q62702-D1335
BDP 949 Q62702-D1337
Pin Configuration
1=B 2=C 3=E
1=B 2=C 3=E
4=C
4=C
Package
SOT-223
SOT-223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
BDP 947
VCEO
BDP 949
Collector-base voltage
BDP 947
VCBO
BDP 949
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99°C
Junction temperature
Storage temperature
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Thermal Resistance
Junction ambient 1)
RthJA
Junction - soldering point
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Values
45
60
Unit
V
45
60
5
3
5
200
500
3
150
- 65 ... + 150
A
mA
W
°C
42
17
K/W
Semiconductor Group
1
Nov-28-1996


BDP947 데이터시트, 핀배열, 회로
BDP 947
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 mA, BDP 947
IC = 10 mA, IB = 0 mA, BDP 949
Collector-base breakdown voltage
IC = 100 µA, IB = 0 , BDP 947
IC = 100 µA, IB = 0 , BDP 949
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 45 V, IE = 0 , TA = 25 °C
VCB = 45 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 2 V
Collector-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
V(BR)CEO
45
60
V(BR)CBO
45
60
V(BR)EBO
5
ICBO
-
-
IEBO
-
hFE
25
85
50
VCEsat
-
VBEsat
-
fT
-
Ccb
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
25
max.
-
-
-
-
-
100
20
100
-
475
-
0.5
1.3
-
-
Unit
V
nA
µA
nA
-
V
MHz
pF
Semiconductor Group
2
Nov-28-1996




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BDP947 transistor

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