BDC02D 반도체 회로 부품 판매점
One Watt Amplifier Transistor
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 Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier Transistor
PNP Silicon
Order this document
by BDC02D/D
BDC02D
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BDC02D
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–100
–100
–5.0
–0.5
1.0
8.0
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Voltage
(IC = –10 mA, IB = 0)
Collector Cutoff Current
(VCB = –100 V, IE = 0)
Emitter Cutoff Current
(IC = 0, VEB = –5.0 V)
1
23
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
Symbol
Min
Max
Unit
V(BR)CEO –100
ICBO
—
IEBO
—
—
–0.1
–100
Vdc
mAdc
nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
BDC02D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
(IC = –500 mA, VCE = –2.0 V)
Collector – Emitter Saturation Voltage(1)
(IC = –1000 mA, IB = –100 mA)
Collector – Emitter On Voltage(1)
(IC = –1000 mA, VCE = –1.0 V)
DYNAMIC CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
40
25
—
—
—
400
—
–0.7 Vdc
–1.2 Vdc
Current Gain Bandwidth Product
(IC = –200 mA, VCE = –5.0 V, f = 20 MHz)
Output Capacitance
(VCB = –10 V, IE = 0, f = 1.0 MHz)
v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
fT 50 — MHz
Cob — 30 pF
400
TJ = 125°C
200
25°C
–55°C
100
80
60
40
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
–50 –70 –100
VCE = –1.0 V
–200 –300 –500
–1.0
TJ = 25°C
–0.8
–0.6
IC = –10 mA
–50
mA
–100 mA
–250 mA –500 mA
–0.4
–0.2
0
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
–50
–1.0
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –1.0 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
0
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
–500
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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BDC02D transistor
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