BD910 반도체 회로 부품 판매점
COMPLEMENTARY SILICON POWER TRANSISTORS
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 STMicroelectronics |
BD909/911
® BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IE,IC Collector Current
IB Base Current
Ptot Total Dissipation at Tc ≤ 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 1999
NPN
PNP
Value
BD909
BD911
BD910
BD912
80 100
80 100
5
15
5
90
-65 to 150
150
Un it
V
V
V
A
A
W
oC
oC
1/6
BD909 / BD910 / BD911 / BD912
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.4
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Pa ram et e r
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD909/910
for BD911/912
Tcase = 150 oC
for BD909/910
for BD911/912
VCB = 80 V
VCB = 100 V
VCB = 80 V
VCB = 100 V
ICEO
Collector Cut-off
Current (IB = 0)
for BD909/910
for BD911/912
VCE = 40 V
VCE = 50 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(s us)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
IC = 5 A
IC = 10 A
for BD909/910
for BD911/912
IB = 0.5 A
IB = 2.5 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 10 A
IB = 2.5 A
VBE∗ Base-Emitter Voltage IC = 5 A
VCE = 4 V
hFE∗ DC Current Gain
IC = 0.5 A
IC = 5 A
IC = 10 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
fT Transition frequency IC = 0. 5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 4 V
Min. Typ.
80
100
40
15
5
3
Max.
500
500
5
5
1
1
1
1
3
2.5
1.5
250
150
Unit
µA
µA
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
Safe Operating Area
Derating Curves
2/6
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제조업체: STMicroelectronics
( stm )
BD910 transistor
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[ BD910 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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