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BD909 반도체 회로 부품 판매점

COMPLEMENTARY SILICON POWER TRANSISTORS



STMicroelectronics 로고
STMicroelectronics
BD909 데이터시트, 핀배열, 회로
BD909/911
® BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IE,IC Collector Current
IB Base Current
Ptot Total Dissipation at Tc 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 1999
NPN
PNP
Value
BD909
BD911
BD910
BD912
80 100
80 100
5
15
5
90
-65 to 150
150
Un it
V
V
V
A
A
W
oC
oC
1/6


BD909 데이터시트, 핀배열, 회로
BD909 / BD910 / BD911 / BD912
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.4
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Pa ram et e r
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD909/910
for BD911/912
Tcase = 150 oC
for BD909/910
for BD911/912
VCB = 80 V
VCB = 100 V
VCB = 80 V
VCB = 100 V
ICEO
Collector Cut-off
Current (IB = 0)
for BD909/910
for BD911/912
VCE = 40 V
VCE = 50 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(s us)Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
IC = 5 A
IC = 10 A
for BD909/910
for BD911/912
IB = 0.5 A
IB = 2.5 A
VBE(sat)Base-Emitter
Saturation Voltage
IC = 10 A
IB = 2.5 A
VBEBase-Emitter Voltage IC = 5 A
VCE = 4 V
hFEDC Current Gain
IC = 0.5 A
IC = 5 A
IC = 10 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
fT Transition frequency IC = 0. 5 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 4 V
Min. Typ.
80
100
40
15
5
3
Max.
500
500
5
5
1
1
1
1
3
2.5
1.5
250
150
Unit
µA
µA
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
Safe Operating Area
Derating Curves
2/6




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BD909 transistor

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