파트넘버.co.kr BD787 데이터시트 PDF


BD787 반도체 회로 부품 판매점

POWER TRANSISTORS COMPLEMENTARY SILICON



ON Semiconductor 로고
ON Semiconductor
BD787 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BD787 − NPN, BD788 − PNP
Complementary Plastic
Silicon Power Transistors
These devices are designed for lower power audio amplifier and
low current, high−speed switching applications.
Features
Low Collector−Emitter Sustaining Voltage − VCEO(sus) 60 Vdc (Min)
High Current−Gain − Bandwidth Product −
fT = 50 MHz (Min) @ IC = 100 mAdc
Collector−Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and
4.0 Adc
Pb−Free Packages are Available*
http://onsemi.com
4 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 15 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
− Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
Value
Unit
60 Vdc
80 Vdc
6.0 Vdc
4.0 Adc
8.0
1.0 Adc
15 W
0.12 mW/_C
–65 to +150 _C
Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case RqJC
8.34 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
321
TO−225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
BD78xG
Y = Year
WW = Work Week
BD78x = Device Code
x = 7 or 8
G = Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
Package
Shipping
BD787
BD787G
TO−225
TO−225
(Pb−Free)
500 Units/Box
500 Units/Box
BD788
TO−225
500 Units/Box
BD788G
TO−225
(Pb−Free)
500 Units/Box
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1
Publication Order Number:
BD787/D


BD787 데이터시트, 핀배열, 회로
BD787 − NPN, BD788 − PNP
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 20 Vdc, IB=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 30 Vdc, IB=0)
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 6.0 Vdc, IC=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 1)
DC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, IB = 200 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, IB = 800 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent−Gain − Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
(VCB = 10 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(f = 0.1 MHz)
BD787
BD788
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data
Symbol
VCEO(sus)
ICEO
Min Max
60 −
− 100
Unit
Vdc
mAdc
ICEX
IEBO
− 1.0 mAdc
− 0.1 mAdc
− 1.0 mAdc
hFE
VCE(sat)
VBE(sat)
VBE(on)
40 250
25 −
20 −
5.0 −
− 0.4
− 0.6
− 0.8
− 2.5
− 2.0
− 1.8
Vdc
Vdc
Vdc
fT 50 − MHz
Cob pF
− 50
− 70
hfe 10 − −
1. Pulse Test; Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
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BD787 transistor

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