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BD780 반도체 회로 부품 판매점

DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45/ 60/ 80 VOLTS 15 WATTS



ON Semiconductor 로고
ON Semiconductor
BD780 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD777/D
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general purpose amplifier and high–speed switching applications.
High DC Current Gain
hFE = 1400 (Typ) @ IC = 2.0 Adc
Collector–Emitter Sustaining Voltage — @ 10 mAdc
VCEO(sus) = 45 Vdc (Min) — BD776
VCEO(sus) = 60 Vdc (Min) — BD777, 778
VCEO(sus) = 80 Vdc (Min) — BD780
Reverse Voltage Protection Diode
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMonolithic Construction with Built–in Base–Emitter output Resistor
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current —
Continuous Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTC = 25_C – Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BD777
BD776 BD778 BD780
45 60 80
45 60 80
5.0
4.0
6.0
100
15
0.12
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristics
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
Symbol
RθJC
RθJA
Max
8.34
83.3
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
_C
Unit
_C/W
_C/W
16 1.6
NPN
BD777
PNP
BD776
BD778
BD780 *
*Motorola Preferred Device
DARLINGTON
4–AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
45, 60, 80 VOLTS
15 WATTS
CASE 77–08
TO–225AA TYPE
12 1.2
8.0 0.8
4.0 0.4
0
20 40
60 80 100 120
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
140
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
0
160
1


BD780 데이터시트, 핀배열, 회로
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBD777 BD776 BD778 BD780
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IO = 10 mAdc, IB = 0)
BD776
BD777, BD778
BD780
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = Rated, VCEO(sus), IE = 0)
(VCB = Rated, VCEO(sus), IE = 0, IC = 100°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
BD776
BD777, BD778
BD780
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (IC = 2.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (IC = 1.5 Adc,VCE = 3 Vdc)
Output Diode Voltage Drop (IEC = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent Gain Bandwidth Product (IC = 1.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTurn–On Time (IC = 250 mA/VCE = 2 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTurn–Off Time (IC = 250 mA, VCE = 2 V)
BD775–777
BD776–778–780
BD775–777
BD776–778–780
Symbol
Min
VCEO(sus)
ICEO
ICBO
IEBO
HFE
VCE(Sat)
VBE(Sat)
VBE(On)
VEC
fT
Symbol
ton
toff
45
60
80
750
20
Min
Max Unit
— Vdc
µAdc
100
100
100
µAdc
1.0
100
1.0 µAdc
1.5 Vdc
2.5 Vdc
2.3 Vdc
2.0 Vdc
— MHz
Typ Unit
250 ns
150
600 ns
400
10
100 µs
5.0
2.0 1.0 ms
5.0 ms
1.0
TJ = 150°C
dc
0.5 BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
0.1 SECONDARY BREAKDOWN LIMITED
0.05 CURVES APPLY BELOW RATED VCEO
500 µs
0.02
0.01
1.0
BD775, 776
BD777, 778
BD780
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Safe Operating Area
3000
777
2000
1500
1000 BD776, 778, 780
700
500
400 TJ = 25°C
300
VCE = 2.0 Vdc
200
100
0.2 0.3
0.5 0.7 1.0
2.0 3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Typical DC Current Gain
PNP
BD776
BD778
BD780
BASE
COLLECTOR
[ 150
NPN
BD777
BD779
BASE
COLLECTOR
[ 150
EMITTER
Figure 4. Darlington Circuit Schematic
EMITTER
2 Motorola Bipolar Power Transistor Device Data




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BD780 transistor

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