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BD708 반도체 회로 부품 판매점

COMPLEMENTARY SILICON POWER TRANSISTORS



STMicroelectronics 로고
STMicroelectronics
BD708 데이터시트, 핀배열, 회로
BD707/709/711
® BD708/712
COMPLEMENTARY SILICON POWER TRANSISTORS
s COMPLEMENTARY PNP - NPN DEVICES
APPLICATION
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BD707, BD709 and BD711 are silicon
Epitaxial-Base NPN power transistors in Jedec
TO-220 plastic package. They are intented for
use in power linear and switching applications.
The BD707 and BD711 complementary PNP
types are BD708 and BD712 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCER Collector-Emitter Voltage (VBE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current
IB Base Current
Ptot Total Dissipation at Tc 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative
September 1999
NPN
PNP
BD707
BD708
60
60
60
Value
BD709
80
80
80
5
12
18
5
75
-65 to 150
150
BD711
BD712
100
100
100
Un it
V
V
V
V
A
A
A
W
oC
oC
1/6


BD708 데이터시트, 핀배열, 회로
BD707/708/709/711/712
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-case Thermal Resistance Junction-ambient
Max
Max
1.67
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Pa ram et e r
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD707/708
for BD709
for BD711/712
Tcase = 150 oC
for BD707/708
for BD709
for BD711/712
ICEO
Collector Cut-off
Current (IB = 0)
for BD707/708
for BD709
for BD711/712
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(s us)Collector-Emitter
Sustaining Voltage
(IB = 0)
VEB = 5 V
IC = 100 mA
for BD707/708
for BD709
for BD711/712
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 4 A
IB = 0.4 A
VCEK
V BE
h F E
Knee Voltage
Base-Emitter Voltage
DC Current Gain
IC = 3 A
IC = 4 A
IC = 0.5 A
IC = 2 A
IC = 4 A
IC = 10 A
IB = **
VCE = 4 V
VCE = 2 V
VCE = 2 V
for BD707/708
for BD709
VCE = 4 V
VCE = 4 V
for BD707/708
for BD709
for BD711/712
fT Transition frequency IC = 300 mA
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
** Value for which IC = 3.3 A at VCE = 2V.
For PNP types voltage and current values are negative.
VCE = 3 V
Min. Typ.
60
80
100
40 120
30
30
15
5 10
8
8
3
Max.
100
100
100
1
1
1
100
100
100
1
1
0.4
1.5
400
150
Unit
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
2/6




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BD708 transistor

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