BD677 판매점 - DARLINGTON POWER TRANSISTORS NPN SILICON

BD677 반도체 회로 부품 판매점

DARLINGTON POWER TRANSISTORS NPN SILICON

ON Semiconductor

www.DataSheet4U.com

BD675, BD675A, BD677,

BD677A, BD679, BD679A,

BD681

BD681 is a Preferred Device

Plastic Medium−Power

Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington

transistors can be used as output devices in complementary

general−purpose amplifier applications.

Features

• High DC Current Gain:

hFE = 750 (Min) @ IC

= 1.5 and 2.0 Adc

• Monolithic Construction

• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary

with BD676, 676A, 678, 678A, 680, 680A, 682

• BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803

• Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage

BD675, A

BD677, A

BD679, A

BD681

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage

BD675, A

BD677, A

BD679, A

BD681

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction

Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction−to−Case

Symbol

Value

VCEO

100

VCBO

100

VEBO

5.0

4.0

1.0

0.32

TJ, Tstg – 55 to + 150

Symbol

qJC

Max

3.13

Unit

Vdc

Adc

W/°C

°C

Unit

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

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4.0 AMPERES

POWER TRANSISTORS

NPN SILICON

60, 80, 100 VOLTS, 40 WATTS

321

TO−225AA

CASE 77

STYLE 1

MARKING DIAGRAMS

YWW

BD6xxG

YWW

BD6xxAG

BD6xx

= Device Code

x = 75, 77, 79, 81

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

October, 2005 − Rev. 12

Publication Order Number:

BD675/D

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Breakdown Voltage, (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, IB = 0)

BD675, 675A

BD677, 677A

BD679, 679A

BD681

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Half Rated VCEO, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

(VCB = Rated BVCEO, IE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = Rated BVCEO, IE = 0, TC = 100’C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Currert Gain, (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc,VCE = 3.0 Vdc)

(IC = 2.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage, (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, IB = 30 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, IB = 40 mAdc)

BD675, 677, 679, 681

BD675A, 677A, 679A

BD677, 679, 681

BD675A, 677A, 679A

Base−Emitter On Voltage, (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 3 0 Vdc)

BD677, 679, 681

BD675A, 677A, 679A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol

BVCEO

ICEO

ICBO

IEBO

hFE

VCE(sat)

VBE(on)

hfe

Min

100

−

—

750

−

1.0

Max Unit

− Vdc

−

500 mAdc

mAdc

0.2

2.0

2.0 mAdc

−

2.5 Vdc

2.8

Vdc

2.5

−−

5.0

30 45 60 75 90 105 120 135 150

TC, CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating

165

5.0

2.0

1.0

0.5

0.2

0.1

0.05

1.0

BONDING WIRE LIMIT

THERMALLY LIMIT at TC = 25°C

SECONDARY BREAKDOWN LIMIT

TC = 25°C

BD675, 675A

BD677, 677A

BD679, 679A

BD681

2.0 5.0 10 20

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 2. DC Safe Operating Area

100

There are two limitations on the power handling ability of

a transistor average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by secondary breakdown.

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( onsemi )

BD677 transistor

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국내 전력반도체 판매점

상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

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( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743

일반적인 전자부품 판매점

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엘레파츠

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BD677 반도체 회로 부품 판매점

DARLINGTON POWER TRANSISTORS NPN SILICON

국내 전력반도체 판매점

일반적인 전자부품 판매점

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