BD538 반도체 회로 부품 판매점
COMPLEMENTARY SILICON POWER TRANSISTORS
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 STMicroelectronics |
BD533/5/7
BD534/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
s BD534, BD535, BD536, BD537 AND BD538
ARE SGS-THOMSON PREFERRED
SALESTYPES
DESCRIPTION
The BD533, BD535, and BD537 are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.
The complementary PNP types are BD534,
BD536, and BD538 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
P ar am et e r
VCBO Collector-Base Voltage (IE = 0)
VCES Collector-Emit ter Voltage (VBE = 0)
VCEO Collector-Emit ter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC,IE Collector and Emit ter Current
IB Base Current
Ptot Total Dissipation at Tc ≤ 25 oC
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
For PNP types voltage and current values are negative.
June 1997
NPN
PNP
BD533
BD534
45
45
45
Value
BD 535
BD 536
60
60
60
5
8
1
50
-65 to 150
150
BD537
BD538
80
80
80
Uni t
V
V
V
V
A
A
W
oC
oC
1/4
BD533/BD534/BD535/BD536/BD537/BD538
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj- amb Thermal Resistance Junction-ambient
Max
Max
2.5
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD533/534
for BD535/536
for BD537/538
VCB = 45 V
VCB = 60 V
VCB = 80 V
ICES Collect or Cut-off
Current (VBE = 0)
for BD533/534
for BD535/536
for BD537/538
VCE = 45 V
VCE = 60 V
VCE = 80 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
VBE∗ Base-Emitt er Voltage
hFE∗ DC Current G ain
VEB = 5 V
IC = 100 mA
IC = 2 A
IC = 6 A
IC = 2 A
IC = 10 mA
IC = 500 mA
IC = 2 A
for BD533/534
for BD535/536
for BD537/538
IB = 0.2 A
IB = 0.6 A
VCE = 2 V
VCE = 5 V
for BD533/534
for BD535/536
for BD537/538
VCE = 2 V
VCE = 2 V
for BD533/534
for BD535/536
for BD537/538
fT Transit ion f requency IC = 500 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 1 V
Min. Typ.
45
60
80
0.8
20
20
15
40
25
25
15
3 12
M a x.
100
100
100
100
100
100
1
0.8
1.5
Unit
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
MHz
Safe Operating Areas
2/4
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제조업체: STMicroelectronics
( stm )
BD538 transistor
데이터시트 다운로드 :
[ BD538.PDF ]
[ BD538 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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