|
NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLY89C
VHF power transistor
Product specification
August 1986
Philips Semiconductors
VHF power transistor
Product specification
BLY89C
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V. It has a
3/8" capstan envelope with a ceramic
cap. All leads are isolated from the
stud.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCC
f
PL Gp η
V MHz W dB %
c.w. 13,5 175 25 >6 >70
zi
Ω
1,6 + j1,4
YL
mS
210 + j5,5
PIN CONFIGURATION
halfpage
4
1
3
handbook, halfpage
2
MSB056
b
MBB012
c
e
PINNING - SOT120
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
|