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PDF BLX14 Data sheet ( Hoja de datos )
| Número de pieza | BLX14 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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BLX14
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX14 is Designed for HF
and VHF band applications.
FEATURES:
• PG = 13 dB min. at 15 W/1.6 MHz
• d3 = -40 dB typ. at 15 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.0 A
VCBO
85 V
VEBO
4.0 V
VCEO
36 V
PDISS
88 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 1.99 °C/W
PACKAGE STYLE .500 4L STUD (A)
.112 x 45°
A
C
Ø .630 NOM
BC E
B
E
1/4-28 UNF-2A
E
D
G
F
H
DIM
MINIMUM
inches / mm
A .220 / 5.59
B
C .545 / 13.84
D .495 / 12.57
E .003 / 0.08
F
G .185 / 4.70
H .497 / 12.62
MAXIMUM
inches / mm
.230 / 5.84
1.050 / 26.67
.555 / 14.10
.505 / 12.83
.007 / 0.18
.830 / 21.08
.198 / 5.03
.530 / 13.46
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 25 mA
BVCER
IC = 25 mA
RBE = 5.0 Ω
BVCEO
IC = 50 mA
BVEBO
IE = 10 mA
hFE VCE = 6.0 V
IC = 1.4 A
MINIMUM TYPICAL MAXIMUM
85
85
36
4.0
15 100
UNITS
V
V
V
V
---
fT VCE = 20 V
CC VCB = 30 V
IC = 3.0 A
f = 1.0 MHz
250 MHz
115 125 pF
GP 13
d3 VCE = 28 V
ICQ =2.0 A
POUT = 15 W(PEP)
f = 1.6 MHz
-40
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet BLX14.PDF ] | |
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