파트넘버.co.kr BLW87 데이터시트 PDF


BLW87 반도체 회로 부품 판매점

VHF power transistor



NXP Semiconductors 로고
NXP Semiconductors
BLW87 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW87
VHF power transistor
Product specification
August 1986


BLW87 데이터시트, 핀배열, 회로
Philips Semiconductors
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
Product specification
BLW87
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
f
PL Gp η
V MHz W dB %
c.w.
13,5 175
25 > 6 > 70
zi
1,6 + j1,4
YL
mS
210 + j5,5
PIN CONFIGURATION
halfpage
1
2
4
handbook, halfpage
b
MBB012
3
MSB057
Fig.1 Simplified outline and symbol.
c
e
PINNING - SOT123
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2




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BLW87 transistor

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