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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW50F
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
class-A, AB and B operated, industrial
and military transmitters in the h.f.
and v.h.f. band. Resistance
stabilization provides protection
against device damage at severe load
mismatch conditions. Matched
hFE groups are available on request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
Product specification
BLW50F
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION
s.s.b. (class-A)
s.s.b. (class-AB)
VCE
V
45
50
Note
1. At 65W P.E.P.
f
MHz
1,6 - 28
1,6 - 28
PL Gp ηdt IC
W dB % A
0 - 16 (P.E.P.) > 19,5
− 1,2
10 - 65 (P.E.P.) typ. 18 typ. 45(1) 1,45
IC(ZS)
mA
−
50
d3
dB
< −40
typ. −30
Th
°C
70
25
PIN CONFIGURATION
halfpage
1
4
handbook, halfpage
c
b
PINNING - SOT123
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
23
MBB012
e
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
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