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PDF BLV99SL Data sheet ( Hoja de datos )
| Número de pieza | BLV99SL | |
| Descripción | UHF power transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV99/SL
UHF power transistor
Product specification
September 1991
1 page  
Philips Semiconductors
UHF power transistor
Product specification
BLV99/SL
APPLICATION INFORMATION
RF performance Tmb = 25 °C in a common emitter class-B test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
c.w. narrow band
900 24
2
PL
(W)
Gp
(dB)
>8
typ. 9.3
ηc
(%)
> 55
typ. 63
handbook,1h0alfpage
Gp
(dB)
5
MBK469
100
handbook, h3alfpage
Gp PL
ηC (W)
(%)
2
ηC
50
1
MBK470
00
0 123
PL (W)
Class-B operation; VCE = 24 V; f = 900 MHz;
Tmb = 25 °C.
Fig.5 Gain and efficiency as functions of load
power, typical values.
0
0 0.1 0.2 0.3 0.4
PS (W)
Class-B operation; VCE = 24 V; f = 900 MHz;
Tmb = 25 °C.
Fig.6 Load power as a function of drive power,
typical values.
Ruggedness in class-B operation
The BLV99/SL is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions:
VCE = 24 V, f = 900 MHz,
Tmb = 25 °C, and rated output power.
September 1991
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BLV99SL.PDF ] | |
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