|
NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV97CE
UHF power transistor
Product specification
March 1993
Philips Semiconductors
UHF power transistor
Product specification
BLV97CE
FEATURES
• Internal input matching to achieve high power gain
• Ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability
DESCRIPTION
NPN silicon planar epitaxial transistor in a SOT171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.
QUICK REFERENCE DATA
RF performance up to Th = 25 °C in a common emitter class-AB circuit.
MODE OF OPERATION
c.w. class-AB
f (MHz)
960
VCE (V)
24
PL (W)
35
GP (dB)
>7
ηc (%)
> 50
PINNING - SOT171A
PIN SYMBOL
1e
2e
3b
4c
5e
6e
DESCRIPTION
emitter
emitter
base
collector
emitter
emitter
handbook, halfpage 2 4 6
135
Top view
b
MAM141
c
e
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 1993
2
|