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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV958; BLV958FL
UHF power transistors
Product specification
Supersedes data of 1997 Oct 15
2000 Jan 12
Philips Semiconductors
UHF power transistors
Product specification
BLV958; BLV958FL
FEATURES
• Internal input and output matching for easy matching,
high gain and efficiency
• Poly-silicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base stations in the 800 to 960 MHz frequency range.
DESCRIPTION
NPN silicon planar epitaxial transistors primarily intended
for common emitter class-AB operation. The transistors
have internal input and output matching by means of MOS
capacitors. The encapsulations are a 2-lead rectangular
SOT391A flange package and a SOT391B flangeless
package, both with a ceramic cap.
PINNING - SOT391A
PIN SYMBOL
DESCRIPTION
1 c collector
2 b base
3 e emitter; connected to flange
PINNING - SOT391B
PIN SYMBOL
DESCRIPTION
1 c collector
2 b base
Ground plane e emitter
handbook, halfpage 1
2
Top view
b
3
MAM203
c
e
Fig.1 Simplified outline (SOT391A) and symbol.
handbook, halfpage 1
2
Top view
b
MSA465
c
e
Fig.2 Simplified outline (SOT391B) and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
f
(MHz)
VCE
(V)
CW, class-AB
900
960
26
26
PL
(W)
75
75
Gp
(dB)
≥8
≥8.5
ηC
(%)
≥50
≥50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Jan 12
2
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