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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV950
UHF push-pull power transistor
Product specification
Supersedes data of 1996 Jan 26
1997 Oct 27
Philips Semiconductors
UHF push-pull power transistor
Product specification
BLV950
FEATURES
• Internal input and output matching for easy matching,
high gain and efficiency
• Poly-silicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base station transmitters in the 800 to 960 MHz range.
PINNING - SOT262A2
PIN SYMBOL
DESCRIPTION
1 c1 collector 1
2 c2 collector 2
3 b1 base 1
4 b2 base 2
5 e common emitter; connected
to flange
DESCRIPTION
Two NPN silicon planar epitaxial transistors in push-pull
configuration, intended for linear common emitter
class-AB operation. The transistors are encapsulated in a
4-lead SOT262A2 flange package with 2 ceramic caps.
The flange provides the common emitter connection for
both transistors.
handbook, halfpage
1
2
c1
b1
5
3
Top view
b2
5
4
MAM031
c2
Fig.1 Simplified outline and symbol.
e
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
CW, class-AB
2-tone, class-AB
900
960
900
960
26 150
26 150
26 150 (PEP)
26 150 (PEP)
Gp
(dB)
≥8
≥7.5
≥8.5
≥8
ηC d3
(%) (dBc)
≥45 −
≥45 −
≥35 ≤−30
≥35 ≤−30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Oct 27
2
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