BLV935 반도체 회로 부품 판매점
UHF power transistor
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV935
UHF power transistor
Product specification
1995 Jun 29
Philips Semiconductors
UHF power transistor
Product specification
BLV935
FEATURES
• Emitter ballasting resistors for an optimum temperature
profile
• Gold metallization ensures excellent reliability
• Internal input matching to achieve high power gain and
easy design of wideband circuits.
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor has
internal input matching by means of MOS capacitors and
is encapsulated in a 6-lead SOT273 flange envelope with
a ceramic cap. All leads are isolated from the flange.
APPLICATIONS
• Base stations in the 820 to 980 MHz range.
PINNING - SOT273
PIN SYMBOL
DESCRIPTION
1 e emitter
2 e emitter
3 c collector
4 b base
5 e emitter
6 e emitter
handbook, halfpage
12
34
56
c
b
e
MAM033
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
CW, class-AB
960 26
PL
(W)
30
Gp
(dB)
≥9
ηC
(%)
≥ 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Jun 29
2
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BLV935 transistor
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국내 전력반도체 판매점
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