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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV934
UHF power transistor
Product specification
Philips Semiconductors
1995 Apr 11
Philips Semiconductors
UHF power transistor
Product specification
BLV934
FEATURES
• Internal input matching to achieve high power gain and
easy design of wideband circuits
• Emitter ballasting resistors for an optimum temperature
profile
• Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor has
internal input matching by means of MOS capacitors and
is encapsulated in a 6-lead SOT171 flange envelope with
a ceramic cap. All leads are isolated from the flange.
APPLICATIONS
• Base station transmitters in the 820 to 960 MHz range.
PINNING - SOT171
PIN SYMBOL
DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
handbook, halfpage 2 4 6
135
Top view
b
MAM141
c
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
CW, class-AB
960 26
PL
(W)
30
Gp
(dB)
≥9
ηC
(%)
≥ 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Apr 11
2
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