|
NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLV909
UHF power transistor
Product specification
Supersedes data of 1996 Nov 04
1999 Jun 25
Philips Semiconductors
UHF power transistor
Product specification
BLV909
FEATURES
• Emitter ballasting resistors for optimum temperature
profile
• Gold metallization ensures excellent reliability
• Internal input matching to achieve high power gain and
easy design of wideband circuits.
PINNING - SOT409B
PIN
1, 4, 5, 8
2, 3
6, 7
SYMBOL
e
b
c
DESCRIPTION
emitter
base
collector
APPLICATIONS
• Common emitter class-AB operation in base stations in
the 820 to 960 MHz frequency range.
DESCRIPTION
NPN silicon planar epitaxial transistor in an 8-lead
SOT409B SMD package with a ceramic cap. All leads are
isolated from the mounting base.
handbook, halfpag8e
5
1
Top view
4
b
MSA467
c
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
CW, class-AB
2-tone, class-AB
960
f1 = 960; f2 = 960.1
26
26
PL
(W)
9
9 (PEP)
Gp
(dB)
≥9.5
≥9.5
ηC dim
(%) (dBc)
≥50 −
≥35 typ. −30
1999 Jun 25
2
|