파트넘버.co.kr BLV909 데이터시트 PDF


BLV909 반도체 회로 부품 판매점

UHF power transistor



NXP Semiconductors 로고
NXP Semiconductors
BLV909 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLV909
UHF power transistor
Product specification
Supersedes data of 1996 Nov 04
1999 Jun 25


BLV909 데이터시트, 핀배열, 회로
Philips Semiconductors
UHF power transistor
Product specification
BLV909
FEATURES
Emitter ballasting resistors for optimum temperature
profile
Gold metallization ensures excellent reliability
Internal input matching to achieve high power gain and
easy design of wideband circuits.
PINNING - SOT409B
PIN
1, 4, 5, 8
2, 3
6, 7
SYMBOL
e
b
c
DESCRIPTION
emitter
base
collector
APPLICATIONS
Common emitter class-AB operation in base stations in
the 820 to 960 MHz frequency range.
DESCRIPTION
NPN silicon planar epitaxial transistor in an 8-lead
SOT409B SMD package with a ceramic cap. All leads are
isolated from the mounting base.
handbook, halfpag8e
5
1
Top view
4
b
MSA467
c
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
CW, class-AB
2-tone, class-AB
960
f1 = 960; f2 = 960.1
26
26
PL
(W)
9
9 (PEP)
Gp
(dB)
9.5
9.5
ηC dim
(%) (dBc)
50
35 typ. 30
1999 Jun 25
2




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BLV909 transistor

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