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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLV862
UHF linear push-pull power
transistor
Product specification
Supersedes data of 1997 Oct 14
1999 Jun 25
Philips Semiconductors
UHF linear push-pull power transistor
Product specification
BLV862
FEATURES
• Double stage internal input and output matching
networks for an optimum wideband capability and
high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-AB operation in output stages in
bands 4 and 5 (470 to 860 MHz) television transmitter
amplifiers (vision or sound).
PINNING
PIN SYMBOL
DESCRIPTION
1 c1 collector 1; note 1
2 c2 collector 2; note 1
3 b1 base 1
4 b2 base 2
5 e common emitter; note 2
Notes
1. Collectors 1 and 2 are connected together internally.
2. Common emitters are connected to the flange.
DESCRIPTION
NPN silicon planar epitaxial transistor with two sections in
push-pull configuration. The device is encapsulated in a
SOT262B 4-lead rectangular flange package, with two
ceramic caps.
handbook, halfpage
1
5
3
Top view
2
b1
b2
5
4
MAM031
c1
e
c2
Fig.1 Simplified outline (SOT262B) and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
MODE OF
f
VCE
PL
Gp
OPERATION
(MHz)
(V)
(W) (dB)
CW class-AB
860
28
150
≥8
typ. 9
ηC
(%)
≥45
typ. 52
∆Gp
(dB)
≤1
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Jun 25
2
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