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BLV33F 반도체 회로 부품 판매점

NPN SILICON RF POWER TRANSISTOR



Advanced Semiconductor 로고
Advanced Semiconductor
BLV33F 데이터시트, 핀배열, 회로
BLV33F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV33F is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
FEATURES:
Gold Metalization
Internal Input Matching
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCB 60 V
VCE
PDISS
TJ
TSTG
θJC
35 V
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.5 OC/W
PACKAGE STYLE .500 6L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10493
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
RBE = 10
BVEBO
IE = 10 mA
ICES VE = 28 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
10 100
UNITS
V
V
V
mA
---
Cob VCB = 28 V
f = 1.0 MHz
80 pF
GPE VCE = 25 V
ICQ = 3.2 A
f = 225 MHz
13.5
14.5
dB
IMD3
PREF = 16 W
Vision = -8 dB
Snd. = -7 dB
Side Band = -16 dB
-55 dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1




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BLV33F transistor

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