|
NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV33F
VHF linear power transistor
Product specification
1996 Oct 10
Philips Semiconductors
VHF linear power transistor
Product specification
BLV33F
FEATURES
• Internally matched input for wideband operation and
high power gain
• Diffused emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
1⁄2” 6 lead SOT119A capstan package with ceramic cap.
All leads are isolated from the flange.
PINNING - SOT119A
PIN SYMBOL
DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
handbook, halfpage
1
3
2
c
4b
e
56
MAM269
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a common emitter push-pull test circuit.
MODE OF
OPERATION
fvision
(MHz)
CW, class-A
CW, class-AB
224.25
224.25
VCE
IC, IC(ZS)
Th
(V) (A) (°C)
70
25 3.2
25
28 0.2 70
dim(1)
(dB)
−55
−55
−
Po sync (1)
(W)
GP
(dB)
sync compr.(2)
sync in/sync out
(%)
>13 >13.5
typ. 19 typ. 14.8
typ. 85 typ. 10.5
30/25
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
2. Television service (negative modulation, C.C.I.R. system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10
2
|