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BLV33F 반도체 회로 부품 판매점

VHF linear power transistor



NXP Semiconductors 로고
NXP Semiconductors
BLV33F 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV33F
VHF linear power transistor
Product specification
1996 Oct 10


BLV33F 데이터시트, 핀배열, 회로
Philips Semiconductors
VHF linear power transistor
Product specification
BLV33F
FEATURES
Internally matched input for wideband operation and
high power gain
Diffused emitter ballasting resistors for an optimum
temperature profile
Gold metallization ensures excellent reliability.
APPLICATIONS
Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
12” 6 lead SOT119A capstan package with ceramic cap.
All leads are isolated from the flange.
PINNING - SOT119A
PIN SYMBOL
DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
handbook, halfpage
1
3
2
c
4b
e
56
MAM269
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a common emitter push-pull test circuit.
MODE OF
OPERATION
fvision
(MHz)
CW, class-A
CW, class-AB
224.25
224.25
VCE
IC, IC(ZS)
Th
(V) (A) (°C)
70
25 3.2
25
28 0.2 70
dim(1)
(dB)
55
55
Po sync (1)
(W)
GP
(dB)
sync compr.(2)
sync in/sync out
(%)
>13 >13.5
typ. 19 typ. 14.8
typ. 85 typ. 10.5
30/25
Notes
1. Three-tone test method (vision carrier 8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak sync level.
2. Television service (negative modulation, C.C.I.R. system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10
2




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