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PDF BLV32F Data sheet ( Hoja de datos )
| Número de pieza | BLV32F | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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BLV32F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV32F is Designed for in
linear v.h.f. amplifiers of television
transmitters and transporters.
FEATURES:
• Diffused emitter ballasting resistors
• PG = 16 dB at 10 W/224 MHz
• Omnigold™ Metalization System
PACKAGE STYLE .500 6L FLG
MAXIMUM RATINGS
IC 4.0 A
VCBO
60 V
VCEO
32 V
VCES
60 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
82 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.1 OC/W
1= Collector 2= Base 3 and 4= Emitter
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 100 mA
BVCES
IC = 15 mA
BVEBO
IE = 10 mA
ICES VCE = 32 V
hFE VCE = 25 V
IC = 1.6 A
MINIMUM TYPICAL MAXIMUM
32
60
4.0
5.0
20 120
UNITS
V
V
V
mA
---
CC VCB = 25 V
f = 1.0 MHz
50
pF
PG VCE = 25 V POUT = 10 W
f = 224 MHz
16
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
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| PDF Descargar | [ Datasheet BLV32F.PDF ] | |
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