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BLV31 반도체 회로 부품 판매점

NPN SILICON RF POWER TRANSISTOR



Advanced Semiconductor 로고
Advanced Semiconductor
BLV31 데이터시트, 핀배열, 회로
BLV31
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV31 is Designed for use
in VHF amplifiers
FEATURES:
PG = 16.5 dB Typical at 224 MHz
Omnigold™ Metallization System
MAXIMUM RATINGS
IC 3A
VCB 60 V
PDISS
48 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG
-65 OC to +150 OC
θJC 3.5 OC/W
D IM
A
B
C
D
E
F
G
H
I
J
K
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
B
DC
E
E
F
G
H
K
M IN IM U M
inches / m m
1.010 / 2 5.65
.2 20 / 5.59
.2 70 / 6.86
.0 03 / 0.08
.1 17 / 2.97
.2 45 / 6.22
.1 75 / 4.45
.2 75 / 6.99
.5 72 / 14.53
.1 30 / 3.30
.6 40 / 16.26
J
I
#8-32 U N C
M A X IM U M
inches / m m
1.055 / 2 6.80
.2 30 /5.84
.2 85 / 7.24
.0 07 / 0.18
.1 37 / 3.48
.2 55 / 6.48
.2 17 / 5.51
.2 85 / 7.24
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 100 mA
BVCES
IC = 25mA
VBE = 0 V
BVEBO
IE = 10 mA
hFE VCE = 25 V IC = 800 mA
COB
VCB = 25 V
f = 1.0 MHz
POUT
PG
* @ 25 OC
VCE = 25 V
F = 224 MHz
IC= 800 mA
T= 70 OC
PIN = 2.5 W
MINIMUM TYPICAL MAXIMUM
30
60
4
15 75 120
UNITS
V
V
V
---
35 pF
5.0 7.0*
15 16.5*
W
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV 0
1/1




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BLV31 transistor

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