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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV25
VHF power transistor
Product specification
August 1986
Philips Semiconductors
VHF power transistor
Product specification
BLV25
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily for use in
v.h.f.-f.m. broadcast transmitters.
FEATURES
• internally matched input for
wideband operation and high
power gain;
• multi-base structure and diffused
emitter ballasting resistors for an
optimum temperature profile;
• gold-metallization ensures
excellent reliability.
The transistor has a 1⁄2in 6-lead
flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit.
MODE OPERATION
VCE
V
f
MHz
PL
W
PS
W
narrow band; c.w.
28 108 175 < 17,5
Gp
dB
> 10,0
η
%
> 65
PIN CONFIGURATION
PINNING
handbook, halfpage
1
3
5
2
4
6
PIN
1
2
3
4
5
6
DESCRIPTION
emitter
emitter
base
collector
emitter
emitter
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
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