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BLV2047 반도체 회로 부품 판매점

UHF power transistor



NXP Semiconductors 로고
NXP Semiconductors
BLV2047 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D372
BLV2047
UHF power transistor
Product specification
Supersedes data of 1999 Jan 28
1999 Jun 09


BLV2047 데이터시트, 핀배열, 회로
Philips Semiconductors
UHF power transistor
Product specification
BLV2047
FEATURES
Emitter ballasting resistors for optimum
temperature profile
Gold metallization ensures excellent reliability
Internal input and output matching for easy design of
wideband circuits
AlN substrate package for environmental safety.
PINNING - SOT468A
PIN DESCRIPTION
1 collector
2 base
3 emitter; connected to flange
APPLICATIONS
Common emitter class-AB operation for PCN
(Personal Communication Networks) and
PCS (Personal Communication Services) base station
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
NPN silicon planar power transistor in a 2-lead SOT468A
flange package with ceramic cap. The emitter is connected
to the flange.
handbook, halfpage
1
Top view
3
2
MBK200
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
CW, class-AB
2-tone, class-AB
2 000
f1 = 2000.0; f2 = 2000.1
26
26
PL
(W)
60
60 (PEP)
Gp
(dB)
8.5
9
ηC
(%)
40
33
dim
(dBc)
≤−30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
Tmb = 25 °C
MIN.
65
MAX. UNIT
65 V
27 V
3V
10 A
270
+150
200
W
°C
°C
1999 Jun 09
2




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