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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D372
BLV2047
UHF power transistor
Product specification
Supersedes data of 1999 Jan 28
1999 Jun 09
Philips Semiconductors
UHF power transistor
Product specification
BLV2047
FEATURES
• Emitter ballasting resistors for optimum
temperature profile
• Gold metallization ensures excellent reliability
• Internal input and output matching for easy design of
wideband circuits
• AlN substrate package for environmental safety.
PINNING - SOT468A
PIN DESCRIPTION
1 collector
2 base
3 emitter; connected to flange
APPLICATIONS
• Common emitter class-AB operation for PCN
(Personal Communication Networks) and
PCS (Personal Communication Services) base station
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
NPN silicon planar power transistor in a 2-lead SOT468A
flange package with ceramic cap. The emitter is connected
to the flange.
handbook, halfpage
1
Top view
3
2
MBK200
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
CW, class-AB
2-tone, class-AB
2 000
f1 = 2000.0; f2 = 2000.1
26
26
PL
(W)
60
60 (PEP)
Gp
(dB)
≥8.5
≥9
ηC
(%)
≥40
≥33
dim
(dBc)
−
≤−30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
Tmb = 25 °C
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
65 V
27 V
3V
10 A
270
+150
200
W
°C
°C
1999 Jun 09
2
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